Display Panel, Display Device and Method for Manufacturing Display Panel

ABSTRACT

The present disclosure relates to a display panel, a display device, and a method for manufacturing a display panel. The display panel includes a display area, an aperture area, and an inner non-display area between the display area and the aperture area. The display area is arranged with an electroluminescent device. The electroluminescent device includes a common layer extending to the inner non-display area. The inner non-display area is arranged with a partition bar at least partially surrounding the aperture area. The common layer located in the inner non-display area is partitioned by the partition bar.

The subject patent application is a divisional of, and claims priorityto, U.S. patent application Ser. No. 16/649,530, filed Sep. 27, 2019,which is a U.S. National Stage under 35 U.S.C. § 371 of InternationalApplication No. PCT/CN2019/108425, filed on Sep. 27, 2019, which claimspriority to Chinese Patent Application No. 201811479243.2 entitled“Display Panel, Display Device, and Method for Manufacturing DisplayPanel”, filed on Dec. 5, 2018. The disclosures of each of theseapplications is incorporated herein by reference in their entirety forall purposes.

TECHNICAL FIELD

The present disclosure relates to the field of display technology, andparticularly to a display panel, a display device, and a method formanufacturing a display panel.

BACKGROUND

With the continuous development of display technology, more and moredisplay panels adopt irregular shapes. For example, some display panelshave apertures in the middle, while others have depressions on theedges, and so on. These irregular shapes may subject the internaldevices of the display panel to water and oxygen erosion.

SUMMARY

According to an aspect of the present disclosure, there is provided adisplay panel. The display panel includes a display area, an aperturearea, and an inner non-display area between the display area and theaperture area. The display area is arranged with an electroluminescentdevice. The electroluminescent device includes a common layer extendingto the inner non-display area. The inner non-display area is arrangedwith a partition bar at least partially surrounding the aperture area,and the common layer located in the inner non-display area ispartitioned by the partition bar.

In some embodiments, the partition bar includes a first layer and asecond layer. The first layer is farther from a substrate of the displaypanel than the second layer. The width of the first layer is greaterthan the width of the second layer. The first layer includes a bottomsurface facing the second layer, and a portion of the bottom surfacethat does not contact the second layer and a side surface of the secondlayer define a side etching channel.

In some embodiments, the display panel further includes an inorganiclayer covering the common layer. At least a portion of the inorganiclayer fills the side etching channel.

In some embodiments, the thickness of the second layer in a directionperpendicular to the substrate is greater than the thickness of thecommon layer in a direction perpendicular to the substrate.

In some embodiments, the thickness of the second layer in a directionperpendicular to the substrate ranges from 0.5 to 5 μm.

In some embodiments, the material of the first layer has greater etchingresistance than the material of the second layer.

In some embodiments, the material of the first layer includes at leastone of titanium, gold, and platinum, and the material of the secondlayer includes at least one of aluminum, copper, or silver.

In some embodiments, the display panel includes a pixel circuit, and thepixel circuit includes a thin film transistor. The source and drain ofthe thin film transistor include a third layer and a fourth layer,wherein the third layer is farther from the substrate than the fourthlayer. The material of the third layer is the same as that of the firstlayer. The material of the fourth layer is the same as that of thesecond layer.

In some embodiments, the partition bar further includes a fifth layercloser to the substrate than the second layer. The width of the fifthlayer is greater than that of the second layer.

In some embodiments, the source and drain further include a sixth layercloser to the substrate than the fourth layer. The material of the fifthlayer is the same as that of the sixth layer.

In some embodiments, the thin film transistor further includes a firstgate dielectric layer, a second gate dielectric layer, and an interlayerdielectric layer, and the first gate dielectric layer, the second gatedielectric layer, and the interlayer dielectric layer extend to theinner non-display area.

In some embodiments, the common layer includes a common organic layerand a cathode.

In some embodiments, the electroluminescent device includes an organiclight emitting diode device and a quantum dot light emitting diodedevice.

According to another aspect of the present disclosure, there is provideda display device, including a display panel according to an embodimentof the present disclosure.

According to yet another aspect of the present disclosure, there isprovided a method for manufacturing a display panel. The display panelincludes a display area, an aperture area, and an inner non-display areabetween the display area and the aperture area. The display area isarranged with an electroluminescent device. The electroluminescentdevice includes a common layer extending to the inner non-display area.The method includes forming a partition bar at least partiallysurrounding the aperture area in the inner non-display area. Thepartition bar is configured to partition the common layer.

In some embodiments, the step of forming a partition bar at leastpartially surrounding the aperture area in the inner non-display areaincludes: providing a first material layer and a second material layer;patterning the first material layer into a first layer and patterningthe second material layer into a semi-fabricated second layer by dryetching, wherein the side surface of the first layer is flush with theside surface of the semi-fabricated second layer; and patterning thesemi-manufactured second layer into a second layer by wet etching, sothat the portion of the bottom surface of the first layer that does notcontact the second layer and the side surface of the second layer definea side etching channel.

In some embodiments, the method further comprises: forming an inorganiclayer covering the common layer by chemical vapor deposition or atomiclayer deposition, wherein at least a portion of the inorganic layerfills the side etching channel.

In some embodiments, the method further includes: forming a source and adrain of the pixel circuit while patterning the first material layerinto a first layer and patterning the second material layer into asemi-fabricated second layer by dry etching.

In some embodiments, the method further comprises: forming an anode ofthe electroluminescent device while patterning the semi-manufacturedsecond layer into a second layer by wet etching.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present invention are described in more detail and byway of non-limiting examples with reference to the accompanyingdrawings, in which:

FIG. 1 schematically illustrates a structure of a display panelaccording to an embodiment of the present disclosure;

FIG. 2 schematically illustrates a structure of a display panelaccording to another embodiment of the present disclosure;

FIG. 3 schematically illustrates a cross-sectional view of a displaypanel according to an embodiment of the present disclosure;

FIG. 4 schematically illustrates an enlarged view of a partial structureof the display panel of FIG. 3 ;

FIG. 5 schematically illustrates a cross-sectional view of a displaypanel according to another embodiment of the present disclosure;

FIG. 6 schematically illustrates an enlarged view of a partial structureof the display panel of FIG. 5 ;

FIG. 7 schematically illustrates a flowchart of a method formanufacturing a display panel according to an embodiment of the presentdisclosure;

FIG. 8 schematically illustrates another flowchart of a method formanufacturing a display panel according to an embodiment of the presentdisclosure;

FIG. 9 schematically illustrates a staged structure of a display panelduring manufacturing, according to an embodiment of the presentdisclosure;

FIG. 10 schematically illustrates a staged structure of a display panelduring manufacturing, according to another embodiment of the presentdisclosure; and

FIG. 11 schematically illustrates a display device according to anembodiment of the present disclosure.

DETAILED DESCRIPTION

A common display panel is generally a full surface display. The edges ofthe display area of the full surface display panel have a regulargeometric shape and there are no apertures inside, and the form is acontinuous plane. As the demand for the display panel changes, sometimesthe display panel is required to adopt a non-full surface display (alsoknown as a special-shaped display). The non-full surface display panelincludes a panel with an irregular shape at the edge of the display areaand a panel with apertures inside the display area. In the following,the irregular edge area and the internal aperture area are collectivelyreferred to as the aperture area. Non-full surface display panels canincrease the effective display area or provide space to accommodateother devices. According to different needs, various devices can bearranged at the apertures. For example, in an aperture of a display areaof a mobile device, devices such as speakers, loudspeakers, varioussensors, various cameras, dot matrix projectors, light sources,fingerprint readers, buttons, etc. can be accommodated. As anotherexample, in a display panel that combines mechanical instructions andelectronic display (such as a dashboard with an electronic displayinterface), a hole can be opened in the middle of the display panel toaccommodate mechanical devices (such as the shaft of a pointer).

Organic Light Emitting Diode (OLED) display devices are a type ofdisplay device that is becoming more and more widely used. The OLEDdisplay device is driven by a thin film transistor of an active matrix,and the organic layer emits light autonomously, and it does not need abacklight, nor does it need a liquid crystal and a light guide plate.Therefore, it is more favorable to the processing of special-shapeddisplays. Quantum dot Light Emitting Diode (QLED) is a light emittingtechnology similar to OLED technology, with the main difference that thelight emitting center of QLED is composed of quantum dot substance. QLEDrequires less power in electro-optical conversion and has certainadvantages in terms of energy saving.

At present, the common organic layer and the cathode of theelectroluminescent device of the OLED display panel and the QLED displaypanel are usually masked using an open mask. This method can only beused to deposit continuous material layers, but cannot deposit patternedmaterial layers. Because the common layer and cathode of theelectroluminescent device cannot be patterned, the thin filmencapsulated inorganic layer cannot completely clad the common layer andthe cathode of the electroluminescent device in the aperture area,especially side surfaces of these layers, so that these layers may beexposed outside of the protection of the encapsulation layer and sufferwater and oxygen erosion, thus causing the display panel failure.Therefore, certain measures need to be taken to block the water andoxygen in the aperture area from eroding the electroluminescent devicefrom the side surfaces, thereby improving the reliability of the displaypanel.

According to an aspect of the present disclosure, there is provided adisplay panel. FIG. 1 schematically illustrates a structure of a displaypanel according to an embodiment of the present disclosure. As shown inFIG. 1 , the display panel includes a display area AA and an outernon-display area OVA surrounding the display area AA. There is anaperture area HA in the display area AA. In some embodiments, theaperture area HA runs throughout the display panel. Various devices canbe arranged therein according to the size and shape of the aperture areaHA. In the display panel of FIG. 1 , the aperture area HA is arrangedinside the display area AA. However, it should be understood that, inother embodiments, the aperture area HA may be arranged at the edge ofthe display area AA. In this case, the display area AA partiallysurrounds the aperture area HA, and the outer non-display area OVAsurrounds the other parts of the aperture area HA.

There is an inner non-display area IVA between the display area AA andthe aperture area HA, that is, the inner non-display area IVA surroundsthe aperture area HA and the display area AA surrounds the innernon-display area IVA. In the display panel where the aperture area HA islocated at the edge of the display area AA, the inner non-display areaIVA partially surrounds the aperture area HA.

FIG. 2 schematically illustrates a structure of a display panelaccording to another embodiment of the present disclosure. As shown inFIG. 2 , the display panel may be circular. The aperture area HA isarranged in the display area AA. In this case, the display area AA isannular. The outer non-display area OVA surrounds the display area AA.In the aperture area HA, various mechanical or electronic components canbe arranged. For example, the display panel may be a dial of aninstrument or a watch, and a shaft for driving a pointer may be arrangedin the aperture area HA. Of course, circular display panels have manyother applications. Accordingly, various devices may be arranged in theaperture area HA, and the present disclosure does not limit on this.

In addition to the embodiments shown in FIGS. 1 and 2 , the displaypanel of the present disclosure may have other shapes, and the aperturearea HA may be arranged at other positions. This disclosure also doesnot limit on this.

FIG. 3 schematically illustrates a cross-sectional view of a displaypanel according to an embodiment of the present disclosure.Specifically, FIG. 3 schematically illustrates a cross-section of adisplay panel along the line BB′ of FIG. 1 according to an embodiment ofthe present disclosure. The display panel includes a substrate 100. Insome embodiments, the substrate 100 may be a flexible substrate. Abarrier layer 101 is arranged on the substrate 100, which can block thepenetration of water and oxygen. The blocking layer 101 exists in thedisplay area AA and the inner non-display area IVA. The barrier layer101 may be composed of a multilayer inorganic material. In the displayarea AA, a pixel circuit is arranged on the barrier layer 101. In someembodiments, the pixel circuit may include a thin film transistor, whichspecifically includes a channel layer 110, a first gate dielectric layer111, a first gate 112, an interlayer dielectric layer 115, and a sourceand drain 120. As shown in FIG. 3 , the thin film transistor may furtherinclude a second gate 114 and a second gate dielectric layer 113. Byarranging the second gate 114, it is possible to store electricity andmaintain the gate voltage of the pixel circuit to be stable. The termsource and drain refers to a pair of two electrodes, one of which is thesource of a thin film transistor and the other is the drain of the thinfilm transistor. In some embodiments, the source and drain 120 arecomposed of three layers of metal, including a third layer 123 furthestfrom the substrate 100, a sixth layer 121 closest to the substrate 100,and a fourth layer 122 between the third layer 123 and the sixth layer121. It should be understood that the terms “third”, “fourth”, and“sixth” do not indicate any order and positional relationship, they areonly used for naming. The third layer 123 and the sixth layer 121 arerelatively stable metals, such as titanium Ti, gold Au, platinum Pt, andthe like. The fourth layer 122 is a metal with more prominentconductivity, such as aluminum Al, copper Cu, silver Ag, and the like. Atypical source/drain structure is a Ti/Al/Ti stack. In otherembodiments, the source and drain 120 may include only the third layer123 and the fourth layer 122. The first gate dielectric layer 111, thesecond gate dielectric layer 113, and the interlayer dielectric layer115 of the thin film transistor extend to the inner non-display areaIVA. The thin film transistor illustrated in FIG. 3 uses a top-gatestructure. It should be understood that, in other embodiments, the thinfilm transistor may be a bottom-gate or double-gate structure, and thisdisclosure does not limit on this.

A planarization layer 131 is provided above the pixel circuit. Theplanarization layer 131 can smooth the in-plane segment gap caused byvarious layer patterns of the display panel. Using the planarizationlayer 131 can reduce the area of the black matrix, increase the apertureratio of the panel, increase the light transmittance, and reduce thepower consumption of the product. There is a first aperture 135 on theplanarization layer 131 so that one of the source and drain 120 isexposed. In the embodiment of FIG. 3 , the drain is exposed through thefirst aperture 135. An electroluminescent device 140 is provided abovethe pixel circuit. The electroluminescent device 140 may be an OLED or aQLED. The anode 132 of the electroluminescent device 140 is connected tothe pixel circuit through the first aperture 135. A pixel definitionlayer 133 is provided above the planarization layer 131 and the anode132. The pixel definition layer 133 includes a non-aperture area and asecond aperture 136. The position of the second aperture 136 correspondsto the anode 132 of the electroluminescent device 140. Various layers ofthe electroluminescent device 140 are formed on the pixel definitionlayer 133 (including the second aperture 136). A part of the layers ofthe electroluminescent device 140 is arranged only in the display areaAA, and another part of the layers may extend to the inner non-displayarea IVA. In the present disclosure, a layer of the electroluminescentdevice 140 extending to the inner non-display area IVA is referred to asa common layer. In some embodiments, the common layer includes a commonorganic layer 142 and a cathode 143. The electroluminescent device 140may further include a light emitting material layer 141 and an opticaladjustment layer. The optical adjustment layer can help display panelsto match on the refractive index and reduce the reflection from otherdielectric layers. It should be understood that the term common organiclayer 142 does not refer to only one layer. In fact, the common organiclayer 142 may be a stack of multiple layer structures, including but notlimited to an electron transport layer and a hole transport layer. Inaddition, although the common organic layer 142 is depicted below thecathode 143 in FIG. 3 , the cathode 143 may be sandwiched between thestacks of the common organic layer when the common organic layer 142 isa stack. A support pillar 134 may be provided on the pixel definitionlayer 133. The support pillar 134 is located on the non-aperture area ofthe pixel definition layer 133 and is used to support the mask platewhen forming a layer structure. In some embodiments, the same Half ToneMask may be used to form the pixel definition layer 133 and the supportpillar 134.

FIG. 4 schematically illustrates an enlarged view of a partial structureof the display panel of FIG. 3 . A partition bar 160 is arranged on theinner non-display area IVA. In some embodiments, the barrier ribs 160are formed on the interlayer dielectric layer 115. In the embodiment ofFIG. 3 , the display panel includes two partition bars 160. Thepartition bar farther from the hole area HA surrounds the partition barcloser to the aperture area HA. However, the present disclosure does notlimit the number of partition bars. When the common layer is formed inthe inner non-display area IVA, the common layer is partitioned by thepartition bar 160. The term “partition” means that the layer structureis physically separated so that water and oxygen erosion cannot betransmitted. Therefore, the erosion of the common layer by the water andoxygen from the aperture area HA will stop at the partition bar 160.

In some embodiments, the partition bar 160 includes two portions havingdifferent widths in a direction perpendicular to the substrate 100.Specifically, the partition bar 160 may include two layers, a firstlayer 161 farther from the substrate 100 and a second layer 162 closerto the substrate 100, respectively. In a more specific embodiment, thethickness of the second layer 162 is greater than the thickness of thecommon layer, so that the height of the top surface of the common layerformed on the interlayer dielectric layer 115 is lower than the lowestpoint of the common layer formed on the partition bar to achievepartitioning. In a more specific embodiment, the thickness of the secondlayer 162 ranges from 0.5 to 5 μm.

In some embodiments, the width of the second layer 162 is narrower thanthe width of the first layer 161, so that a portion of the bottomsurface of the first layer 161 does not contact the second layer 162.The bottom surface of this portion and side surfaces of the second layer162 define a side etching channel 170. The side etching channel 170makes it impossible for the common layer to completely cover the sidesurfaces of the partition bar 160 during deposition, which furtherensures the partition of the common layer. In order to make such astructure, the material of the first layer 161 is selected to havegreater etching resistance than the material of the second layer 162.After the first layer 161 and the semi-fabricated second layer 162′ withflushed side surfaces are formed on the interlayer dielectric layer 115using a method such as dry etching, the two layers can be etched using awet etching process. The term semi-fabricated second layer 162′ is alayer formed of a material of the second layer formed on the interlayerdielectric layer 115 after etching, the side of which is aligned withthe first layer 161, which can be understood as a form before being thesecond layer 162. The material of the second layer, which has a worseetching resistance, is etched to a greater extent, so that the width ofthe material of the second layer is narrower, thereby forming a sideetching channel 170. In some embodiments, the material of the firstlayer 161 may include at least one of titanium, gold, and platinum, andthe material of the second layer 162 may include at least one ofaluminum, copper, or silver.

In some embodiments, the layer arrangement of the partition bar 160 maybe the same as that of the source and drain 120. Specifically, thepartition bar 160 and the source and drain 120 may both have a two-layerstructure, and the material of the first layer 161 of the partition bar160 is the same as that of the third layer 123 of the source and drain120 mentioned above. The material of the second layer 162 of thepartition bar 160 is the same as that of the fourth layer 122 of thesource and drain 120 mentioned above. In this way, the material of thefirst layer and the material of the second layer with the side edgesaligned, that is, the first layer 161 and the semi-fabricated secondlayer 162′, can be formed while the source and drain 120 are formed.

FIG. 5 schematically illustrates a cross-sectional view of a displaypanel according to another embodiment of the present disclosure. FIG. 6schematically illustrates an enlarged view of a partial structure of thedisplay panel of FIG. 5 . In this display panel, the partition bar 160has a three-layer structure. The partition bar 160 may include threeportions in a vertical direction, wherein the width of the middleportion is smaller than those of the upper portion and the lowerportion. Specifically, in addition to the first layer 161 and the secondlayer 162 mentioned above, the partition bar 160 may further include afifth layer 163 closer to the substrate 100 than the second layer 162.In some embodiments, the source and drain 120 may also have athree-layer structure, that is, in addition to the third layer 123 andthe fourth layer 122, a sixth layer 121 closer to the substrate 100 isalso included. In some embodiments, the material of the fifth layer 163and the material of sixth layer 121 may be the same, so that thepartition bar 160 and the source and drain 120 may be formedsynchronously.

An encapsulation layer 150 is arranged on the common layer. In someembodiments, the encapsulation layer 150 includes a first inorganiclayer 151 and an organic layer 152 so as to block water and oxygenerosion. The first inorganic layer 151 covers the common layer, and atleast a part of the first inorganic layer 151 fills the side etchingchannel 170 so that there is physical insulation between the commonlayers that are partitioned. In some embodiments, a second inorganiclayer 153 may be further formed on the organic layer 152. The portionsof the first inorganic layer 151 and the second inorganic layer 153 thatare close to the aperture area HA may be connected together to surroundthe organic layer 152, so as to fully exert the water blockingperformance of the first inorganic layer 151 and the second inorganiclayer 153. In some embodiments, the first inorganic layer 151 iscomposed of one or more layers of silicon oxide, silicon nitride,silicon oxynitride, aluminum oxide, and aluminum nitride with high waterresistance.

According to yet another aspect of the present disclosure, there isprovided a method for manufacturing a display panel. FIG. 7schematically illustrates a flowchart of a method for manufacturing adisplay panel according to an embodiment of the present disclosure. Thedisplay panel includes a display area AA, an aperture area HA, and aninner non-display area IVA between the display area AA and the aperturearea HA. The display area AA is arranged with an electroluminescentdevice 140. The electroluminescent device 140 includes a common layerextending to the inner non-display area IVA. The method includes forminga partition bar 160 at least partially surrounding the aperture area HAin the inner non-display area IVA (step 200). The partition bar 160 isconfigured to partition the common layer. In this application, therelated technologies for making the pixel circuit and theelectroluminescent device 140 will not be described again.

FIG. 8 schematically illustrates another flowchart of a method formanufacturing a display panel according to an embodiment of the presentdisclosure. In some embodiments, step 200 specifically includes:

205: providing a first material layer and a second material layer,

210: patterning the first material layer into the first layer 161 andpatterning the second material layer into the semi-fabricated secondlayer 162′ by dry etching, wherein the side surfaces of the first layer161 are flush with the side surfaces of the semi-fabricated second layer162′.

215: Patterning the semi-fabricated second layer 162′ into the secondlayer 162 by wet etching, so that the portion of the bottom surface ofthe first layer 161 that does not contact the second layer 162 and theside of the second layer 162 defines a side etching channel 170.

The second material layer is an un-patterned layer formed by thematerial of the second layer 162 on the interlayer dielectric layer 115.The first material layer is an un-patterned layer formed by the materialof the first layer 161 on the second material layer. That is, the firstmaterial layer is located above the second material layer. In someembodiments, the thickness of the second material layer is greater thanthe thickness of the common layer to be formed. Then, the first materiallayer and the second material layer are etched to obtain asemi-fabricated partition bar 160′, which includes a first layer 161 anda semi-fabricated second layer 162′. The semi-manufactured second layer162′ is a layer formed of the second material layer after etching, withthe side aligned with the first layer 161, which can be understood as anintermediate form being between the second material layer and the secondlayer 162. FIG. 9 schematically illustrates a staged structure of thedisplay panel of FIG. 3 during the manufacturing, that is, a structureof a semi-manufactured partition bar 160′ formed through step 210.

In some embodiments, the first material layer and the second materiallayer may be patterned by dry etching. The directional characteristicsof the dry etching process make the topography of the side surfaces ofthe etched layer more controllable. Therefore, the sides of the firstlayer 161 and the semi-fabricated second layer 162′ formed by the dryetching process can be kept substantially flush. In some embodiments,the cross-section of the semi-fabricated partition bar 160′perpendicular to the substrate 100 may be rectangular or trapezoidal.

FIG. 10 schematically illustrates a staged structure of the displaypanel of FIG. 5 during the manufacturing. In the embodiment of FIG. 5 ,the partition bar 160 adopts a three-layer structure, that is, itincludes a first layer 161, a second layer 162, and a fifth layer 163.In this case, step 210 may further include patterning the fifth materiallayer into a fifth layer 163 by dry etching. The side surfaces of thefifth layer 163 are substantially flush with the side surfaces of thefirst layer 161 and the semi-fabricated second layer 162′.

In some embodiments, the layer arrangement of the partition bar 160 isthe same as the layer arrangement of the source and drain 120 of thepixel circuit, that is, the partition bar 160 and the source and drain120 include the same number of layers, and the partition bar 160 isarranged from top to bottom with the first layer 161 and the secondlayer 162, and the source and drain 120 are arranged from the top tobottom with the third layer 123 and the fourth layer 122, and thematerials of the first layer 161 and the third layer 123 are the same,and the materials of the second layer 162 and the fourth layer 122 arethe same. When the source and drain 120 and the partition bar 160 bothadopt a three-layer structure, a fifth layer 163 is further arrangedunder the second layer 162 of the partition bar 160 and a sixth layer121 is further arranged under the fourth layer 122 of the source anddrain, and the materials of the fifth layer 163 and the sixth layer 121are the same. In this case, forming the semi-fabricated partition bar160′ may be performed in the same step as forming the source and drain120. That is, while the first material layer is patterned into the firstlayer 161 by the dry etching and the second material layer is patternedinto the semi-fabricated second layer 162′, the source and drain 120 ofthe pixel circuit is formed in the same step.

Then, the semi-fabricated second layer 162′ is patterned into a secondlayer 162, so that the portion of the bottom surface of the first layer161 that is not in contact with the second layer 162 and the sidesurfaces of the second layer 162 define a side etching channel 170.Through this step, the partition bar 160 can be formed. In someembodiments, this step may be formed by wet etching. Because thematerial of the second layer 162 has poorer etching resistance and isprone to erosion by the etching solution while the material of the firstlayer 161 has better etching resistance, the semi-fabricated secondlayer 162′ is etched inward from the side surfaces, thereby forming asecond layer 162 with the width smaller than the first layer 161. Insome embodiments, the semi-fabricated second layer 162′ may be etchedusing an acidic etching solution.

In some embodiments, the material of the second layer 162 may be thesame as the anode 132 of the electroluminescent device 140. In thiscase, the second layer 162 and the anode 132 may be formed in the samestep at the same time. Specifically, in some embodiments, after formingthe semi-fabricated partition bar 160′ and the source and drain 120, aplanarization layer 131, a first aperture 135, and an anode materiallayer may be formed. Then, while the semi-fabricated second layer 162′is patterned into the second layer 162, the anode material layerarranged on the planarization layer 131 and the first aperture 135 ispatterned in the same patterning process, thereby forming the anode 132of the electroluminescent device 140.

Thereafter, a pixel definition layer 133, a second aperture 136, and alight emitting material layer 141 during electroluminescence 140 may beformed on the anode 132. The light emitting material layer 141 may bepatterned by a fine metal mask process (FMM). Then, a method such asevaporation and inkjet printing can be used to form a common layer usingthe Open Mask. The common layer is partitioned due to the presence ofthe partition bar 160. At the partition bar 160, the common layer isformed only above the partition bar 160 and is not formed on the side ofthe partition bar 160, that is, the side etching channel 170 is exposed.In some embodiments, the common layer 160 may be formed by anevaporation method. The directionality of the evaporation process isbetter, so that the form of the common layer 160 on the partition bar iseasier to be controlled, and thus improving the stability of thepartition effect.

After the common layer 160 is formed, a first inorganic layer 151 may bedeposited on the common layer 160. At least part of the first inorganiclayer 151 fills the side etching channel 170, so that the part of thecommon layer on the partition bar 160 is completely encapsulated by thefirst inorganic layer 151, and the common layer is physically isolated.In some embodiments, the deposition of the first inorganic layer 151 maybe achieved by chemical vapor deposition or atomic layer deposition.Chemical vapor deposition and atomic layer deposition have good patterncoverage, can fill the side etching channel 170 of the partition bar160, make the common layer susceptible to water and oxygen erosion to bepartitioned by the first inorganic layer 151, and block the pathway ofwater and oxygen intrusion. An organic layer 152 may be provided on thefirst inorganic layer 151. The characteristics of the organic layer 152make the thickness of the its portion near the aperture area HAgradually thinner. In some embodiments, a second inorganic layer 153 mayalso be provided on the organic layer 152, so that a portion of thesecond inorganic layer 153 close to the aperture area HA and a portionof the first inorganic layer 151 close to the aperture area HA areconnected together, and wrapped with the organic layer 152 to fullyexert the water blocking performance of the inorganic layer. The edge ofthe organic layer 152 preferably covers the range of the partition bar,so that the second inorganic layer 153 can be deposited on a relativelysmooth surface, and thereby improving the reliability of the film layer.

After the encapsulation is completed, a method such as mechanical,laser, etching, etc. can be used to open a hole throughout the aperturearea HA for other subsequent processes.

According to another aspect of the present disclosure, there is alsoprovided a display device including a display panel according to anembodiment of the present disclosure. FIG. 11 illustrates a displaydevice 1100 including a display panel 1102 according to an embodiment ofthe present disclosure. The display panel 1102 may be a display panelaccording to an embodiment of the present disclosure as described above.The display panel according to the present disclosure can be applied tovarious display devices, including but not limited to mobile phones,tablet computers, personal digital assistants, smart watches, cardisplays, digital cameras, notebook computers, head-up displays,wearable devices, virtual reality devices as well as augmented realitydevices.

In summary, the present disclosure provides a display panel, a displaydevice, and a method for manufacturing a display panel. The displaypanel includes a display area, an aperture area, and an innernon-display area between the display area and the aperture area. Thedisplay area is arranged with an electroluminescent device and a pixelcircuit. The electroluminescent device includes a common layer extendingto the inner non-display area. The inner non-display area is arrangedwith a partition bar that at least partially surrounds the aperturearea. The common layer located in the inner non-display area ispartitioned by the partition bar. Since the common layer is partitioned,the erosion to the common layer by water and oxygen from the aperturearea is prevented at the partition bar, so the common layer in thedisplay area will not be subjected to erosion by water and oxygen,thereby increasing the reliability of the display panel.

It will be appreciated that the above embodiments are described by wayof example only. Although the embodiments have been illustrated anddescribed in detail in the drawings and the foregoing description, suchillustrations and descriptions are to be considered illustrative orexemplary and not restrictive, and the invention is not limited to thedisclosed embodiments. In addition, it should be understood that theelements in the drawings of the present application are not necessarilydrawn to scale, and the dimensions shown in the drawings do notrepresent the actual or relative sizes of the elements.

Through studying the drawings, the disclosure, and the appended claims,those skilled in the art can understand and reach other modifications tothe disclosed embodiments when practicing the claimed invention. In theclaims, the word “comprising” does not exclude other elements or steps,and the indefinite article “a” does not exclude plural. A singleprocessor or other unit may fulfill the functions of several itemsrecited in the claims. The mere fact that certain measures are recitedin mutually different dependent claims does not indicate that acombination of these measures cannot be used to make advantage. Anyreference signs in the claims should not be construed as limiting thescope. The use of the words first, second, third, fourth, fifth, sixthand similar words does not imply any ordering. These words will beinterpreted as names.

What is claimed is:
 1. A display panel comprising: a display area, anaperture area, and an inner non-display area between the display areaand the aperture area, wherein the display area is arranged with anelectroluminescent device, the electroluminescent device comprising acommon layer extending to the inner non-display area; and, the innernon-display area is arranged with a partition bar at least partiallysurrounding the aperture area, wherein the partition bar includes afirst layer, a second layer, and a fifth layer, the first layer isfarther from the substrate of the display panel than the second layer,the fifth layer is closer to the substrate than the second layer, thewidth of the first layer is greater than the width of the second layer,the width of the fifth layer is greater than that of the second layer,and the common layer located in the inner non-display area ispartitioned by the partition bar.
 2. The display panel according toclaim 1, wherein the first layer includes a bottom surface facing thesecond layer, and a portion of the bottom surface that does not contactthe second layer, a portion of a to surface of the fifth layer that doesnot contact the second layer and side surfaces of the second layerdefine a side etching channel.
 3. The display panel according to claim2, further comprising an inorganic layer covering the common layer,wherein at least a portion of the inorganic layer fills the side etchingchannel.
 4. The display panel according to claim 1, wherein thethickness of the second layer in a direction perpendicular to thesubstrate is greater than the thickness of the common layer in adirection perpendicular to the substrate.
 5. The display panel accordingto claim 1, wherein the thickness of the second layer in a directionperpendicular to the substrate ranges from 0.5 to 5 μm.
 6. The displaypanel according to claim 2, wherein the material of the first layer hasgreater etching resistance than the material of the second layer.
 7. Thedisplay panel according to claim 6, wherein the material of the firstlayer includes at least one of titanium, gold, and platinum, and thematerial of the second layer includes at least one of aluminum, copper,or silver.
 8. The display panel according to claim 6, further comprisinga pixel circuit, wherein the pixel circuit includes a thin filmtransistor, and the source and a drain of the thin film transistorinclude a third layer and a fourth layer, wherein the third layer isfarther from the substrate than the fourth layer, and the material ofthe third layer is the same as that of the first layer, and the materialof the fourth layer is the same as that of the second layer.
 9. Thedisplay panel according to claim 8, wherein side surfaces of the fifthlayer are flush with side surfaces of the first layer.
 10. The displaypanel according to claim 9, wherein the source and the drain furtherinclude a sixth layer closer to the substrate than the fourth layer, andwherein the material of the fifth layer is the same as that of the sixthlayer.
 11. The display panel according to claim 8, wherein the thin filmtransistor further includes a first gate dielectric layer, a second gatedielectric layer and an interlayer dielectric layer, the first gatedielectric layer, the second gate dielectric layer and the interlayerdielectric layer extend to the inner non-display area.
 12. The displaypanel according to claim 1, wherein the common layer includes a commonorganic layer and a cathode.
 13. The display panel according to claim 1,wherein the electroluminescent device includes an organic light emittingdiode device and a quantum dot light emitting diode device.
 14. Adisplay device comprising a display panel, wherein display panelcomprising: a display area, an aperture area, and an inner non-displayarea between the display area and the aperture area, wherein the displayarea is arranged with an electroluminescent device, theelectroluminescent device comprising a common layer extending to theinner non-display area; and, the inner non-display area is arranged witha partition bar at least partially surrounding the aperture area,wherein the partition bar includes a first layer, a second layer, and afifth layer, the first layer is farther from the substrate of thedisplay panel than the second layer, the fifth layer is closer to thesubstrate than the second layer, the width of the first layer is greaterthan the width of the second layer, the width of the fifth layer isgreater than that of the second layer; and the common layer located inthe inner non-display area is partitioned by the partition bar.
 15. Amethod for manufacturing a display panel, wherein the display panelcomprises a display area, an aperture area, and an inner non-displayarea between the display area and the aperture area, and the displayarea is arranged with an electroluminescent device, theelectroluminescent device comprising a common layer extending to theinner non-display area, the inner non-display area being arranged with apartition bar at least partially surrounding the aperture area, thepartition bar including a first layer, a second layer and a fifth layer,the width of the first layer being greater than the width of the secondlayer, the width of the fifth layer being greater than the width of thesecond layer, the common layer located in the inner non-display areabeing partitioned by the partition bar, the method comprising: providinga first material layer, a second material layer and a fifth materiallayer, wherein the first material layer is farther from the substrate ofthe display panel than the second material layer, the fifth materiallayer is closer to the substrate than the second material layer; andforming the first material layer within the inner non-display area intothe first layer, forming the second material layer within the displayarea into the second layer, and forming the fifth material layer withinthe display area into the fifth layer.
 16. The method of claim 15,wherein forming the first material layer within the inner non-displayarea into the first layer, forming the second material layer within theinner non-display area into the second layer and forming the fifthmaterial layer within the display area into the fifth layer comprise:patterning the first material layer into the first layer, patterning thesecond material layer into a semi-fabricated second layer and patterningthe fifth material layer into the fifth layer by dry etching, whereinside surfaces of the first layer are flush with side surfaces of thesemi-fabricated second layer, and side surfaces of the fifth layer areflush with side surfaces of the semi-fabricated second layer, andpatterning the semi-manufactured second layer into the second layer bywet etching, so that a portion of a bottom surface of the first layerthat does not contact the second layer, a portion of a top surface ofthe fifth layer that does not contact the second layer and side surfacesof the second layer define a side etching channel.
 17. The method ofclaim 16, further comprising: forming an inorganic layer covering thecommon layer by chemical vapor deposition or atomic layer deposition,wherein at least part of the inorganic layer fills the side etchingchannel.
 18. The method of claim 17, wherein the display area isarranged with a pixel circuit, the pixel circuit including a thin filmtransistor, and a source and a drain of the thin film transistorincluding a third layer, a sixth layer and a fourth layer between thethird layer and the sixth layer, the method further comprising: forminga source and a drain of a pixel circuit while patterning the firstmaterial layer into the first layer, patterning the second materiallayer into the semi-fabricated second layer and patterning the fifthmaterial layer into the fifth layer by dry etching.
 19. The method ofclaim 17, further comprising: forming an anode of the electroluminescentdevice while patterning the semi-manufactured second layer into thesecond layer by wet etching.
 20. The display device according to claim14, wherein the first layer includes a bottom surface facing the secondlayer, and a portion of the bottom surface of the first layer that doesnot contact the second layer, a portion of a top surface of the fifthlayer that does not contact the second layer and side surfaces of thesecond layer define a side etching channel.